Semiconductor device and manufacturing method thereof

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United States of America Patent

PATENT NO 9812587
SERIAL NO

15001834

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Abstract

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A miniaturized transistor is provided. A transistor with low parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A semiconductor device including the transistor is provided. A miniaturized semiconductor device includes an oxide semiconductor, the first conductor, the second conductor, the third conductor, the first insulator, and the second insulator. The first conductor is embedded in a region between the second conductor and the third conductor with the first insulator positioned between the first conductor and the region.

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Patent Owner(s)

  • SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamazaki, Shunpei Tokyo, JP 7291 226813

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