Method for manufacturing nitride semiconductor template

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United States of America Patent

PATENT NO 9812607
SERIAL NO

15511909

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Abstract

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There is provided a method for manufacturing a nitride semiconductor template, including the steps of: growing and forming a buffer layer in a thickness of not more than a peak width of a projection and in a thickness of not less than 10 nm and not more than 330 nm on a sapphire substrate formed by arranging conical or pyramidal projections on its surface in a lattice pattern; and growing and forming a nitride semiconductor layer on the buffer layer.

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Patent Owner(s)

  • SUMITOMO CHEMICAL COMPANY, LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujikura, Hajime Hitachi, JP 55 229

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