Deep ultraviolet light-emitting diode chip and package structure containing the same
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United States of America Patent
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Nov 7, 2017
Grant Date -
Sep 21, 2017
app pub date -
Sep 7, 2016
filing date -
Mar 15, 2016
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Abstract
A deep UV LED chip includes a light-emitting unit, an electrode unit, an electron blocking layer, and an optical layer. The electron blocking layer is disposed between a multiple quantum well layer and a p-type aluminum gallium nitride layer of the light-emitting unit. The optical layer is formed on the light-emitting unit and has a refractive index ranging from 1.0 to 2.3. Another deep UV LED chip further includes a light-transmitting substrate. The optical layer is formed on the light-transmitting substrate and has a refractive index ranging from 1.0 to a refractive index of the light-transmitting substrate. A package structure containing the deep UV LED chip is also disclosed.
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