Semiconductor device and method for forming the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9818861
SERIAL NO

14695864

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A semiconductor device including a substrate having a drain region therein is provided. A gate-electrode layer is disposed on the drain region. A first field-plate conductor is disposed on the substrate and overlaps the drain region. A gap is located laterally between the first field-plate conductor and the gate-electrode layer. A second field-plate conductor covers the first field-plate conductor and the gap. The second field-plate conductor is separated from the first field-plate conductor. A method for forming the semiconductor device is also provided.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lao, Chung-Ren Taichung, TW 20 36
Song, Chien-Hsien Kaohsiung, TW 18 28

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 May 14, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 May 14, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00