Organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and preparation method thereof
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United States of America Patent
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Nov 14, 2017
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Apr 28, 2017
filing date -
May 3, 2016
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Abstract
The invention discloses an organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and a preparation method thereof. The preparation method comprises the following steps of 1) cleaning the ITO glass substrate; 2) forming a phosphonic acid or trichlorosilane modified layer; 3) forming an organic coating film layer; and 4) forming an electrode, and finally obtaining the organic electric memory device. By adoption of the method, a series of sandwich-type organic electric memory devices are prepared; meanwhile, the preparation method is simple, convenient, fast, and easy to operate; compared with the conventional device, the turn-on voltage of the organic electric memory device is lowered, the yield of the multi-level system is improved, and the problem of relatively low ternary productivity at present is solved; and therefore, the organic electric memory device has extremely high application value in the future memory fields.
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