Method to fabricate GaN-based vertical-cavity surface-emitting devices featuring silicon-diffusion defined current blocking layer

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United States of America Patent

PATENT NO 9819152
SERIAL NO

14876817

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This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL.

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Patent OwnerAddress
NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGYTAIPEI CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Ching-Chin Taipei, TW 4 67
LIn, Jia-Huan Taipei, TW 1 2
Yeh, Ping-Hui Taipei, TW 4 5
Yu, Meng-Chun Taipei, TW 1 2

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