Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line
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United States of America Patent
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Nov 21, 2017
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app pub date -
Oct 12, 2015
filing date -
Oct 14, 2014
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Abstract
A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.
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