EUV light source for a lighting device of a microlithographic projection exposure apparatus
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United States of America Patent
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Nov 21, 2017
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N/A
app pub date -
Sep 15, 2016
filing date -
Mar 26, 2014
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Abstract
An EUV light source for an illumination device of a microlithographic proj ection exposure apparatus, includes an electron source for generating an electron beam, an accelerator unit for accelerating the electron beam, and an undulator arrangement for generating EUV light by deflecting the electron beam. The undulator arrangement includes a first undulator for generating EUV light having a first polarization state and at least one second undulator for generating EUV light having a second polarization state different than the first polarization state. The second undulator is downstream of the first undulator along the direction of propagation of the electron beam. The undulator arrangement is configured so that it has a first operating mode, in which the first undulator is in saturation with regard to the generation of EUV light, and at least one second operating mode, in which the first undulator is not in saturation with regard to the generation of EUV light.
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