Waferless clean in dielectric etch process

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United States of America Patent

PATENT NO 9824865
SERIAL NO

14198532

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Abstract

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A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from the plasma process chamber and removing the protective layer from the top surface of the electrostatic chuck. A capacitive coupled plasma system including a waferless cleaning recipe is also described.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Carman, David San Jose, US 16 381
Li, Shijian San Jose, US 114 2388
Radhakrishnan, Chander Pleasanton, US 3 12

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