Sputtering target and method for producing the same

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United States of America Patent

PATENT NO 9824868
SERIAL NO

14355988

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Abstract

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A sputtering target which is made of a magnesium oxide sintered body having a purity of not less than 99.99% or not less than 99.995% by mass %, a relative density of not less than 98%, and an average grain size of not more than 8 μm. The average grain size of the sputtering target is preferably not more than 5 μm, more preferably not more than 2 μm. A sputtered film having an excellent insulation resistance and an excellent homogeneity can be obtained by using the sputtering target.

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Patent Owner(s)

Patent OwnerAddress
FERROTEC CERAMICS CORPORATION3-4 NIHONBASHI 2-CHOME CHUO-KU TOKYO 1030027 ?1030027

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arahori, Tadahisa Tokyo, JP 7 84
Kusano, Eiji Ishikawa, JP 4 11
Miyashita, Sachio Tokyo, JP 2 5
Okamoto, Ken Tokyo, JP 42 421
Sakamoto, Muneaki Ishikawa, JP 2 5
Sato, Akishige Tokyo, JP 2 5

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