Method for depositing metals free ald silicon nitride films using halide-based precursors

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United States of America Patent

PATENT NO 9824884
SERIAL NO

15287176

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Abstract

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A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chandrasekharan, Ramesh Portland, US 72 3966
Henri, Jon West Linn, US 62 9260
Kelchner, Kathryn Merced Portland, US 5 509
McKerrow, Andrew John Lake Oswego, US 13 692
Sims, James S Tigard, US 18 2396
Varadarajan, Seshasayee Lake Oswego, US 53 2454

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