Semiconductor formation by lateral diffusion liquid phase epitaxy

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United States of America Patent

PATENT NO 9824892
SERIAL NO

13812089

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Abstract

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A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.

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Patent Owner(s)

Patent OwnerAddress
MCMASTER UNIVERSITYHAMILTON ONTARIO L8S 4L8

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kitai, Adrian Mississauga, CA 14 169
Li, Bo Hamilton, CA 785 4905
Yu, Haoling Toronto, CA 1 3

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