Semiconductor device, method of manufacturing the same, and method of evaluating semiconductor device

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United States of America Patent

PATENT NO 9825171
SERIAL NO

15232343

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Abstract

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A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this order; and source/drain material layers formed in recesses (holes) in the silicon substrate, the recesses being located beside the gate electrode. Here, each of side surfaces of the recesses, which are closer to the gate electrode, is constituted of at least one crystal plane of the silicon substrate.

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Patent Owner(s)

  • FUJITSU SEMICONDUCTOR LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukutome, Hidenobu Kawasaki, JP 25 343
Kubo, Tomohiro Kawasaki, JP 51 499

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