Integrated circuit cointegrating a FET transistor and a RRAM memory point

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United States of America Patent

PATENT NO 9831288
SERIAL NO

15387850

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Abstract

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The invention relates to an integrated circuit (1), comprising:

    a field-effect transistor (2), comprising:first and second conduction electrodes (201, 202);a channel zone (203) arranged between the first and second conduction electrodes;a gate stack (220) arranged vertically in line with the channel zone, and comprising a gate electrode (222);an RRAM-type memory point (31) formed under the channel zone, or formed in the gate stack under the gate electrode.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS FRANCE29 BOULEVARD ROMAIN ROLLAND MONTROUGE 92120

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Athanasiou, Sotirios Lyons, FR 11 24
Galy, Philippe Lyons, FR 68 1038
Grenouillet, Laurent Claix, FR 64 283

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