Capacitor structure and process for fabricating the same

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United States of America Patent

PATENT NO 9831303
SERIAL NO

13666984

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A process for fabricating a capacitor is described. A template layer including a stack of at least one first layer and at least one second layer is formed over a substrate, wherein the at least one first layer and the at least one second layer have different etching selectivities and are arranged alternately. An opening is formed through the template layer. A wet etching process is performed to recess the at least one first layer relative to the at least one second layer, at the sidewall of the opening. A bottom electrode of the capacitor is formed at the bottom of the opening and on the sidewall of the opening, and then the template layer is removed.

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Patent Owner(s)

  • NANYA TECHNOLOGY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Cheng-Shun Miaoli County, TW 10 141
Hsieh, Chang-Yao Changhua County, TW 2 7
Kuo, Chi-Hsiang Taoyuan County, TW 21 380

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