Semiconductor device
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United States of America Patent
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Nov 28, 2017
Issued Date -
N/A
app pub date -
Feb 20, 2015
filing date -
Feb 20, 2015
priority date (Note) -
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Abstract
Provided is a semiconductor apparatus includes: a gate electrode disposed inside a trench and opposedly facing a p type base region with a gate insulating film interposed therebetween on a portion of a side wall; a shield electrode disposed inside the trench and positioned between the gate electrode and a bottom of the trench; an electric insulating region disposed inside the trench, the electric insulating region expanding between the gate electrode and the shield electrode, and further expanding along the side wall and the bottom of the trench so as to separate the shield electrode from the side wall and the bottom; a source electrode electrically connected to an n+ type source region and the shield electrode, wherein the shield electrode has a high resistance region positioned on an n+ drain region side, and a low resistance region positioned on a gate electrode side.
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