Method for manufacturing monocrystalline graphene

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9834855
SERIAL NO

15103368

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE267 GAJEONG-RO YUSEONG-GU DAEJEON 34113

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hwang, Chanyong Seoul, KR 3 11

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Jun 5, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jun 5, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00