Gas sensing using magnetic tunnel junction elements
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United States of America Patent
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Dec 5, 2017
Grant Date -
Jun 8, 2017
app pub date -
Dec 3, 2015
filing date -
Dec 3, 2015
priority date (Note) -
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Abstract
Gas sensing using MTJ elements to capture/store gas concentration level data for readout at room temperature. In one embodiment, during reset the MTJ elements are heated above blocking temperatures of their storage layers while applying a first magnetic biasing force to set initial magnetic orientations. During gas sensing, reaction heat from a gas sensing element combines with control heat to raise each MTJ element's temperature from a work point temperature above its blocking temperature only when the target gas exceeds an associated concentration level, whereby a second magnetic biasing force causes the magnetic orientation to switch directions. During readout, read currents are measured to determine the MTJ elements' final resistance states, which indicate their switched/non-switched states, and the resistance states are correlated with stored data to determine the measured gas concentration level. The MTJ elements are cooled after reset and gas sensing to facilitate accurate CDS readout data.
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