Magnetoelectric sensor and method for the production thereof
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United States of America Patent
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Dec 12, 2017
Grant Date -
Sep 3, 2015
app pub date -
Oct 7, 2013
filing date -
Oct 8, 2012
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Abstract
Magnetoelectric sensors that can be manufactured using known methods of thin film technology and output an ME voltage that is many times higher for a predetermined magnetic field than the known cantilever-beam sensor. The design that is termed separator ME sensor is characterized by the arrangement of a thick dielectric layer (14) between the ferroelectric (10) and the magnetostrictive phases (12), and by an electrode arrangement (18) applied on one side of the ferroelectric (10) and that is engineered to tap the ME voltage along the extent of the layer. Advantageously, it can be manufactured easily by coating conventional dielectric substrates (14) on the front and rear with one each of the functional layers (10, 12).
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