Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium

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United States of America Patent

PATENT NO 9842636
SERIAL NO

15134514

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Provided is a structure having a perpendicular magnetization film which is an (Mn1-xGax)4N1-y (0

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Patent Owner(s)

Patent OwnerAddress
NATIONAL INSTITUTE FOR MATERIALS SCIENCEJAPAN
SAMSUNG ELECTRONICS COMPANY LIMITED416 MAETAN-DONG PALDAL-KU SUWON-CITY KYUNGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hono, Kazuhiro Ibaraki, JP 40 412
Kasai, Shinya Ibaraki, JP 24 90
Kim, Kwangseok Gyeonggi-do, KR 24 464
Lee, Hwachol Ibaraki, JP 2 12
Liu, Jun Ibaraki, JP 1497 18125
Mitani, Seiji Ibaraki, JP 16 152
Ohkubo, Tadakatsu Ibaraki, JP 16 106
Sukegawa, Hiroaki Ibaraki, JP 15 236

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