Adaptive charge balanced edge termination
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United States of America Patent
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Dec 12, 2017
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app pub date -
May 30, 2012
filing date -
May 30, 2012
priority date (Note) -
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Abstract
In one embodiment, a semiconductor device can include a substrate including a first type dopant. The semiconductor device can also include an epitaxial layer located above the substrate and including a lower concentration of the first type dopant than the substrate. In addition, the semiconductor device can include a junction extension region located within the epitaxial layer and including a second type dopant. Furthermore, the semiconductor device can include a set of field rings in physical contact with the junction extension region and including a higher concentration of the second type dopant than the junction extension region. Moreover, the semiconductor device can include an edge termination structure in physical contact with the set of field rings.
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