Nitride semiconductor light emitting element

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United States of America Patent

PATENT NO 9842967
SERIAL NO

15318100

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Provided is a nitride semiconductor light emitting element in which deep-level light emission is suppressed, monochromaticity is improved, and light is emitted in a high-efficiency manner. A nitride semiconductor light emitting element having a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, wherein the n-type nitride semiconductor layer contains AlnGa1-nN (017/cm3 or less.

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Patent OwnerAddress
USHIO DENKI KABUSHIKI KAISHA1-6-5 MARUNOUCHI CHIYODA-KU TOKYO 1008150

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Miyoshi, Kohei Himeji, JP 41 394
Sugiyama, Toru Himeji, JP 138 1630
Tsukihara, Masashi Himeji, JP 15 67

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