Radio frequency plasma method for uniform surface processing of RF cavities and other three-dimensional structures
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United States of America Patent
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Dec 26, 2017
Grant Date -
Feb 9, 2017
app pub date -
Apr 16, 2015
filing date -
Apr 21, 2014
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Abstract
A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.
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