Backside contact to a final substrate
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United States of America Patent
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Dec 26, 2017
Issued Date -
N/A
app pub date -
Sep 23, 2016
filing date -
Jun 19, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
Device structures and fabrication methods for a backside contact to a final substrate. An electrically-conducting connection is formed that extends through a device layer of a silicon-on-insulator substrate and partially through a buried insulator layer of the silicon-on-insulator substrate. After the electrically-conducting connection is formed, a handle wafer of the silicon-on-insulator substrate is removed. After the handle wafer is removed, the buried insulator layer is partially removed to expose the electrically-conducting connection. After the buried insulator layer is partially removed, a final substrate is coupled to the buried insulator layer such that the electrically-conducting connection is coupled with the final substrate.
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