Three-dimensional memory device having integrated support and contact structures and method of making thereof
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United States of America Patent
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Dec 26, 2017
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app pub date -
Jan 20, 2017
filing date -
Jan 20, 2017
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Abstract
Memory openings and support openings are formed through an alternating stack of insulating layers and sacrificial material layers over a substrate. The support openings are laterally expanded by laterally recessing the insulating layers with respect to the sacrificial material layers. The laterally expanded support openings are filled with a combination of a dielectric material and a sacrificial fill material to form support pillar structures. After forming memory films and channels in the memory openings, the sacrificial material layers are replaced with electrically conductive layers while the support pillar structures provide structural support to the insulating layers. The sacrificial fill material is replaced with contact via structures to form integrated support and contact structures.
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