Method of manufacturing high resistivity silicon-on-insulator substrate
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United States of America Patent
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Dec 26, 2017
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Aug 25, 2015
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Sep 4, 2014
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Abstract
A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm; a silicon dioxide layer on the surface of the semiconductor handle substrate; a carbon-doped amorphous silicon layer in contact with the silicon dioxide layer; a dielectric layer in contact with the carbon-doped amorphous silicon layer; and a semiconductor device layer in contact with the dielectric layer.
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