Method for forming a semiconductor device and a semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9972704
APP PUB NO 20160141399A1
SERIAL NO

14935830

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method for forming a semiconductor device comprises implanting a defined dose of protons into a semiconductor substrate and tempering the semiconductor substrate according to a defined temperature profile. At least one of the defined dose of protons and the defined temperature profile is selected depending on a carbon-related parameter indicating information on a carbon concentration within at least a part of the semiconductor substrate.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jelinek, Moriz Villach, AT 33 113
Laven, Johannes Georg Taufkirchen, DE 123 606
Oefner, Helmut Zorneding, DE 26 84
Schulze, Hans-Joachim Taufkirchen, DE 684 3917
Schustereder, Werner Villach, AT 65 216

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Nov 15, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Nov 15, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00