High-voltage semiconductor device and method of manufacturing the same
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United States of America Patent
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Dec 26, 2017
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app pub date -
Oct 4, 2016
filing date -
Oct 4, 2016
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Abstract
High-voltage semiconductor devices are provided. The high-voltage semiconductor device includes a substrate and an isolation structure in the substrate. The high-voltage semiconductor device includes a gate structure disposed on the substrate, wherein the gate structure is separated from the isolation structure by a distance. The high-voltage semiconductor device also includes a metal electrode disposed on the gate structure, wherein the metal electrode extends to directly above the isolation structure. The high-voltage semiconductor device further includes an interconnection structure including the lowest metal layer, wherein the metal electrode is between the lowest metal layer and the gate structure. Methods of manufacturing the high-voltage semiconductor device are also provided.
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