Method of manufacturing fin field effect transistor

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United States of America Patent

PATENT NO 9853153
SERIAL NO

14437401

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Abstract

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The present invention provides a method of manufacturing a fin field effect transistor, comprising: providing an SOI substrate comprising a substrate layer (100), a BOX layer (120) and an SOI layer (130); forming a basic fin structure from an SOI layer; forming source/drain regions (110) on both sides of the basic fin structure; forming a fin structure between the source/drain regions (110) from a basic fin structure; and forming a gate stack across the fin structure. The method of manufacturing a fin field effect transistor provided in the present invention can integrate a high-k gate dielectric layer, a metal gate, and stressed source/drain regions into the fin field effect transistor to enhance the performance of the semiconductor device.

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Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Liang, Qingqing Lagrangeville, US 158 1676
Luo, Zhijiong Poughkeepsie, US 249 2954
Yin, Haizhou Poughkeepsie, US 241 2072
Zhu, Huilong Poughkeepsie, US 589 8348

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