Self aligned epitaxial based punch through control
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United States of America Patent
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Dec 26, 2017
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app pub date -
Dec 7, 2016
filing date -
Apr 13, 2016
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Abstract
A method of forming a semiconductor device that may include etching source and drain portions of a fin structure of a first semiconductor material selectively to an underlying semiconductor layer of a second semiconductor material, and laterally etching undercut region in the semiconductor layer underlying the fin structure. The method may further include filling the undercut region with a first conductivity type semiconductor material, and forming a second conductivity type semiconductor material for a source region and a drain region on opposing sides of the channel region portion of the fin structure.
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