Tantalum sputtering target and production method therefor

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United States of America Patent

PATENT NO 9859104
SERIAL NO

14654866

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Abstract

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A tantalum sputtering target, wherein on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 70% or less, an orientation rate of a (222) plane is 10% or more, an average crystal grain size is 50 μm or more and 150 μm or less, and a variation in a crystal grain size is 30 μm or less. By controlling the crystal orientation of the target, it is possible to increase the sputter rate, consequently deposit the required film thickness in a short period of time, and improve the throughput. In addition, by controlling the crystal grain size on the sputtering surface of the target, an effect is yielded in that the abnormal discharge during sputtering can be suppressed.

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Patent Owner(s)

  • JX NIPPON MINING & METALS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagatsu, Kotaro Ibaraki, JP 15 40
Senda, Shinichiro Ibaraki, JP 15 93

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