Advanced e-Fuse structure with enhanced electromigration fuse element

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United States of America Patent

PATENT NO 9859209
SERIAL NO

15083236

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Abstract

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A structure and method for fabricating an e-Fuse device in a semiconductor device is described. A method for fabricating an e-Fuse device includes providing a trench structure including an anode region, a cathode region and a fuse element which interconnects the anode and cathode regions in a dielectric material on a first surface of a substrate. The fuse element has a smaller cross section and a higher aspect ratio than the anode and cathode regions. The trench is filled in the anode and cathode regions with a high electromigration (EM) resistant conductive material. The trench in the fuse element region is filled with a low EM resistant conductive material. Another aspect of the invention is an e-Fuse device. The e-Fuse device includes an anode region, a cathode region and a fuse element which interconnects the anode and cathode regions in a dielectric material on a first surface of a substrate. The fuse element has a smaller cross section and a higher aspect ratio than the anode and cathode regions. The anode and cathode regions are comprised of a high EM-resistant conductive material. The fuse element is comprised of low EM-resistant conductive material.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Edelstein, Daniel C White Plains, US 301 6031
Yang, Chih-Chao Glenmont, US 1033 7530

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