Integrated circuits having copper bonding structures with silicon carbon nitride passivation layers thereon and methods for fabricating same

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United States of America Patent

PATENT NO 9859236
SERIAL NO

14816648

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Abstract

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Integrated circuits having copper bonding structures with silicon carbon nitride passivation layers and methods for making the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate and a copper bonding structure having a contact surface. The copper bonding structure overlies the substrate. A passivation layer formed of silicon carbon nitride is disposed on the contact surface.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES SINGAPORE PTE LTD60 WOODLANDS INDUSTRIAL PARK D STREET 2 SINGAPORE 738406

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chong, Meng Meng Singapore, SG 1 1
Rao, Xuesong Singapore, SG 18 26
Seet, Chim Seng Singapore, SG 38 238
Zhan, Xiaohua Singapore, SG 3 6

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