Selectively degrading current resistance of field effect transistor devices

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United States of America Patent

PATENT NO 9859280
SERIAL NO

15177768

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Abstract

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A method includes selectively degrading a current capacity of a first finned-field-effect-transistor (finFET) relative to a second finFET by forming a material on a fin of the first finFET to increase a current resistance of the first finFET. The second finFET is electrically connected to the first finFET in a circuit such that a current flow through the second finFET is a multiple of a current flow through the first finFET.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Basker, Veeraraghavan S Schenectady, US 487 4269
Leobandung, Effendi Stormville, US 536 4748
Wendel, Dieter Boeblingen, DE 63 441
Yamashita, Tenko Schenectady, US 599 4947

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