Imaging device manufacturing method

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United States of America Patent

PATENT NO 9859329
SERIAL NO

15383357

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Abstract

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There is provided an imaging device manufacturing method contributing to improved reliability and yield. The method includes forming a first insulating film on a polysilicon film and then removing a portion of the first insulating film formed on a second main surface and a portion of the first insulating film formed on a side surface of the substrate to expose a polysilicon film. After the polysilicon film is exposed, a second insulating film is formed on the first main surface by a plasma chemical vapor deposition (CVD) method.

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Patent Owner(s)

  • CANON KABUSHIKI KAISHA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirota, Katsunori Yamato, JP 21 86
Ogawa, Satoshi Oume, JP 192 1827
Ukigaya, Nobutaka Yokohama, JP 53 572

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