Integrated circuit device and method of manufacturing the same

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United States of America Patent

PATENT NO 9859392
SERIAL NO

15269001

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Abstract

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An integrated circuit device includes a first gate stack formed on a first high dielectric layer and comprising a first work function adjustment metal containing structure and a second gate stack formed on a second high dielectric layer and comprising a second work function adjustment metal containing structure having an oxygen content that is greater than that of the first work function adjustment metal containing structure.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Weon-hong Suwon-si, KR 64 1137
Lim, Ha-jin Seoul, KR 37 536
Park, Gi-gwan Suwon-si, KR 47 647

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