Lateral diffused semiconductor device with ring field plate

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United States of America Patent

PATENT NO 9859399
SERIAL NO

14072105

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Abstract

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A lateral diffused semiconductor device is disclosed, including: a substrate; a first isolation and a second isolation comprising at least portions disposed in the substrate to define an active area; a first drift region and a second drift region disposed in the active area, wherein the first drift region is disposed in the second drift region; a gate structure on the substrate; a source region in the first drift region; a drain region in the second drift region; and a ring-shaped field plate on the substrate, wherein the ring-shaped field plate surrounds at least one of the source and the drain region.

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Patent Owner(s)

  • VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Sue-Yi Hsinchu, TW 6 20
Huang, Chih-Jen Dongshan Township, TW 81 1500
Song, Chien-Hsien Kaohsiung, TW 18 28

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