Single-electron transistor with wrap-around gate

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United States of America Patent

PATENT NO 9859409
SERIAL NO

15140557

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Abstract

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Transistors and methods of forming the same include forming a fin having an active layer between two sacrificial layers. A dummy gate is formed over the fin. Spacers are formed around the dummy gate. The dummy gate is etched away to form a gap over the fin. Material from the two sacrificial layers is etched away in the gap. A gate stack is formed around the active layer in the gap. Source and drain regions are formed in contact with the active layer.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3065 29582
Miao, Xin Guilderland, US 355 2228
Xu, Wenyu Albany, US 190 905
Zhang, Chen Guilderland, US 669 2799

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