Semiconductor devices having spacer protection pattern
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United States of America Patent
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Jan 2, 2018
Issued Date -
N/A
app pub date -
Aug 24, 2016
filing date -
Nov 27, 2015
priority date (Note) -
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Abstract
A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair of the active patterns in a second direction crossing the first direction, gate spacers on sidewalls of the pair of the active patterns, source/drain regions on the pair active patterns between the pair of the gate electrodes, and a spacer protection pattern between the pair of the gate electrodes and between the pair of the active patterns. The spacer protection pattern may be commonly connected to the gate spacers.
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