Semiconductor devices and methods for manufacturing the same
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United States of America Patent
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Jan 2, 2018
Grant Date -
Jul 28, 2016
app pub date -
Oct 29, 2013
filing date -
Aug 30, 2013
priority date (Note) -
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Abstract
Semiconductor devices and methods for manufacturing the same are provided. An example semiconductor device may include: a Semiconductor on Insulator (SOI) substrate, including a base substrate, a buried dielectric layer and an SOI layer, an active area disposed on the SOI substrate and including a first sub-area and a second sub-area, wherein the first sub-area includes a first fin portion, the second sub-area includes a second fin portion opposite to the first fin portion, and at least one of the first sub-area and the second sub-area includes a laterally extending portion; a back gate arranged between the first fin portion and the second fin portion; back gate dielectric layers sandwiched between the back gate and the respective fin portions; and a gate stack formed on the active area.
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