Electronic device
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
May 20, 2016
filing date -
Nov 30, 2015
priority date (Note) -
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Abstract
This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory, and the semiconductor memory may include free layer having a variable magnetization direction; a tunnel barrier layer formed over the free layer; a pinned layer formed over the tunnel barrier layer and having a pinned magnetization direction; an exchange coupling layer formed over the pinned layer; and a magnetic correction layer formed over the exchange coupling layer, wherein the magnetic correction layer comprises a first magnetic layer, a spacer layer and a second magnetic layer that are sequentially stacked, and the first magnetic layer has a saturation magnetization smaller than a saturation magnetization of the second magnetic layer.
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