Write data path to reduce charge leakage of negative boost

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United States of America Patent

PATENT NO 9865337
SERIAL NO

15466749

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Abstract

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A write driver is provided that includes a first write driver inverter that inverts a data signal to drive a gate of a second write driver transistor. The write driver transistor has a terminal coupled to a bit line and another terminal coupled to a boost capacitor. A ground for the first write driver inverter floats during a write assist period to choke off leakage of boost charge from the boost capacitor through the write driver transistor.

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Patent Owner(s)

  • QUALCOMM INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ahmed, Fahad San Diego, US 24 111
Chen, Po-Hung San Diego, US 70 239
Gupta, Raghav Bangalore, IN 63 1803
Jung, Chulmin San Diego, US 102 1051
Narasimhan, Mukund Bangalore, IN 40 327
Raj, Pradeep Bangalore, IN 13 32
Sahu, Rahul Bangalore, IN 36 166

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