Devices and methods for selecting a forming voltage for a resistive random-access memory
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Aug 23, 2016
filing date -
Sep 30, 2015
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Abstract
A memory driving device and a method thereof applied for a RRAM array are provided. The memory driving device includes a voltage generator, a current detector, and a controller. The voltage generator generates a write voltage. An RRAM cell of the RRAM array is selected according to a selection signal for receiving the program voltage to generate a program current. The current detector detects the program current. The controller executes a driving procedure which includes: obtaining a voltage distribution for the program voltage; determining the initial voltage and the maximum voltage of the program voltage according to the voltage distribution; gradually increasing the program voltage from the initial voltage to the maximum voltage; determining whether the program current exceeds the reference current; and selecting another RRAM cell when the write current exceeds the reference current.
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