Strain relaxed buffer layers with virtually defect free regions
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United States of America Patent
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Jan 9, 2018
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app pub date -
Feb 13, 2017
filing date -
Feb 8, 2016
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Abstract
A strain relaxed buffer layer of a second semiconductor material and of a second lattice constant and containing misfit dislocation defects and threading dislocation defects is formed atop a surface of a first semiconductor material of a first lattice constant that differs from the second lattice constant. The surface of the first semiconductor material includes at least one recessed region and adjoining non-recessed regions. An anneal is then performed on the strain relaxed buffer layer to propagate and amass the misfit dislocation defects and threading dislocation defects at a sidewall of each of the non-recessed regions of the first semiconductor material.
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