Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure

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United States of America Patent

PATENT NO 9865507
SERIAL NO

15204428

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Abstract

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Impurity atoms of a first type are implanted through a gate and a thin gate dielectric into a channel region that has substantially only the first type of impurity atoms at a middle point of the channel region to increase the average dopant concentration of the first type of impurity atoms in the channel region to adjust the threshold voltage of a transistor.

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  • TEXAS INSTRUMENTS INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chatterjee, Amitava Plano, US 110 1591
Hao, Pinghai Plano, US 49 338
Pendharkar, Sameer Allen, US 182 1289

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