Metallic blocking layer for reliable interconnects and contacts
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United States of America Patent
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Jan 9, 2018
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app pub date -
Mar 9, 2016
filing date -
Mar 9, 2016
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Abstract
A semiconductor structure is provided that includes a first interconnect dielectric layer containing a first interconnect metal structure embedded therein. A second interconnect dielectric layer containing a second interconnect metal structure embedded therein is located atop the first interconnect dielectric layer. A metallic blocking layer is present that separates a surface of the second interconnect metal structure from a surface of the first interconnect metal structure. The metallic blocking layer has a lower resistivity than the first and second interconnect metal structures. The metallic blocking layer prevents electromigration of metallic ions from the first and second interconnect metal structure.
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