Method and structure for forming buried ESD with FinFETs

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United States of America Patent

PATENT NO 9865587
SERIAL NO

15651503

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Abstract

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A semiconductor structure is provided that includes an electrostatic discharge (ESD) device integrated on the same semiconductor substrate as semiconductor fin field effect transistors (FinFETs). The ESD device includes a three-dimension (3D) wrap-around PN diode connected to the semiconductor substrate. The three-dimension (3D) wrap-around PN diode has an increased junction area and, in some applications, improved heat dissipation.

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Patent Owner(s)

  • INTERNATIONAL BUSINESS MACHINES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Kangguo Schenectady, US 3073 29791
Loubet, Nicolas J Guilderland, US 56 322
Miao, Xin Guilderland, US 355 2275
Reznicek, Alexander Troy, US 1408 11211

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