Backside illuminated (BSI) CMOS image sensor (CIS) with a resonant cavity and a method for manufacturing the BSI CIS

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United States of America Patent

PATENT NO 9865640
SERIAL NO

15011573

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Abstract

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A backside illuminated semiconductor image sensor that includes a Fabry-Perot resonator tuned to absorb near infrared (NIR) radiation; wherein the Fabry-Perot resonator comprises a front reflector, a back reflector and an active Silicon layer between the front reflector and the back reflector.

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Patent Owner(s)

Patent OwnerAddress
TOWER SEMICONDUCTOR LTDMIGDAL HAEMEK

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fenigstein, Amos Haifa, IL 31 623
Lahav, Assaf Binyamina, IL 14 281

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