Semiconductor device and manufacturing method therefor

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United States of America Patent

PATENT NO 9865686
SERIAL NO

14646583

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Abstract

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A semiconductor device includes a fin extending on a substrate along a first direction; a gate extending along a second direction across the fin; and source/drain regions and a gate spacer on the fin at opposite sides of the gate, in which there is a surface layer on the top and/or sidewalls of the fin.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ma, Xiaolong Beijing, CN 54 289
Yin, Huaxiang Beijing, CN 109 1161
Zhu, Huilong Poughkeepsie, US 589 8348

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