Electrode structure for resistive memory device

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United States of America Patent

PATENT NO 9865798
SERIAL NO

14630438

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Abstract

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A semiconductor device includes an interconnect layer and a bottom electrode of a resistive memory device. The bottom electrode is coupled to the interconnect layer, and the bottom electrode is comprised of cobalt tungsten phosphorus (CoWP).

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Patent Owner(s)

Patent OwnerAddress
QUALCOMM INCORPORATED5775 MOREHOUSE DRIVE SAN DIEGO CA 92121-1714

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Junjing San Diego, US 99 513
Kang, Seung Hyuk San Diego, US 133 1559
Li, Xia San Diego, US 412 4123
Lu, Yu San Diego, US 350 8616

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